类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 512Kb (64K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 15 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F16G08ABCBBM62B3WC1Micron Technology |
IC FLASH 16GBIT PARALLEL DIE |
|
QMP29GL128P10TAI020Cypress Semiconductor |
IC MEMORY NOR |
|
MT52L1DAPF-DC TRMicron Technology |
LPDDR3 8G |
|
S29WS128N0PBAW012Cypress Semiconductor |
IC MEMORY NOR |
|
MT41K64M16JT-15E:G TRMicron Technology |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
MT35XL256ABA2GSF-0AATMicron Technology |
IC FLASH 256MBIT XCCELA 24TPBGA |
|
CG7501AATCypress Semiconductor |
IC SRAM NON VOLATILE 48FBGA |
|
MT53B512M32D2NP-062 WT:DMicron Technology |
IC DRAM 16GBIT 1600MHZ 200WFBGA |
|
MT53D1G32D4NQ-062 WT ES:DMicron Technology |
LPDDR4 32G 1GX32 FBGA QDP |
|
MT29F3T08EUCBBM4-37ES:B TRMicron Technology |
IC FLASH 3TB PARALLEL 267MHZ |
|
70261L55PFIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
DS2433AX-S+TWMaxim Integrated |
IC EEPROM 4KBIT 1-WIRE |
|
MT29F4G16ABAEAWP:EMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP |