English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 4Kb (256 x 16) |
| 内存接口: | 1-Wire® |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 2 µs |
| 电压 - 电源: | - |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-VBGA, FCBGA |
| 供应商设备包: | 6-FlipChip (2.82x2.54) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT41K256M16HA-125 XIT:E TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
|
70P244L55BYGI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 81CABGA |
|
|
S99GL512S10TFI010Cypress Semiconductor |
IC FLASH MEMORY NOR |
|
|
S99GL128P90TFIR10Cypress Semiconductor |
IC GATE NOR |
|
|
MT53D4DAWT-DCMicron Technology |
IC SDRAM LPDDR4 16GBIT 256MX64 F |
|
|
MT29F1T08CQCBBG2-6R:B TRMicron Technology |
IC FLASH 1TB PARALLEL 272TBGA |
|
|
S99FL132KMM43Cypress Semiconductor |
IC FLASH NOR |
|
|
MT29F6T08ETCBBM5-37:B TRMicron Technology |
IC FLASH 6TB PARALLEL 267MHZ |
|
|
MT29TZZZ7D7EKKBT-107 W.97VMicron Technology |
MLC EMMC/LPDDR3 280G |
|
|
S99GL512S0030Cypress Semiconductor |
IC FLASH |
|
|
MT52L4DAGN-DC TRMicron Technology |
SPECIAL/CUSTOM LPDDR3 |
|
|
S30ML02GP30TFI500Cypress Semiconductor |
IC FLASH MEMORY 48TSOP |
|
|
MT47H512M4EB-25E:CMicron Technology |
IC DRAM 2GBIT PARALLEL 60FBGA |
