English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 32Kb (2K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 20ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 68-LCC (J-Lead) |
| 供应商设备包: | 68-PLCC (24.21x24.21) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT29F256G08CKEDBJ5-12:D TRMicron Technology |
IC FLASH 256GBIT PAR 132TBGA |
|
|
7006L15JI8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
|
MT53B1024M32D4NQ-053 WT:CMicron Technology |
IC DRAM 32GBIT 1866MHZ 200VFBGA |
|
|
MT48H32M16LFB4-75 IT:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 54VFBGA |
|
|
M29F400BB70M6EMicron Technology |
IC FLASH 4MBIT PARALLEL 44SO |
|
|
70V27L15BFRenesas Electronics America |
IC SRAM 512KBIT PAR 144CABGA |
|
|
24CS512T-E/SNRoving Networks / Microchip Technology |
512K 3.4MHZ I2C SERIAL EEPROM |
|
|
CG8190AMCypress Semiconductor |
IC SRAM |
|
|
IS67WVC4M16EALL-7010BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 64MBIT PARALLEL 104MHZ |
|
|
S71PL032J08BAW0B0CCypress Semiconductor |
IC FLASH MEMORY SMD |
|
|
7006L25JI8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
|
MT52L8DBQC-DCMicron Technology |
SPECIAL/CUSTOM LPDDR3 |
|
|
MT53D4DCFL-DC TRMicron Technology |
LPDDR4 FBGA QDP |
