English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 16Kb (2K x 8, 1K x 16) |
| 内存接口: | SPI |
| 时钟频率: | 3 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | Die |
| 供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
70V38L12PF8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
|
DS28E02P-W10+2Maxim Integrated |
IC EEPROM 1KBIT 1-WIRE 6TSOC |
|
|
DS2432P-W0F+1Maxim Integrated |
IC EEPROM 1KBIT 1-WIRE 6TSOC |
|
|
24CS512-E/SNRoving Networks / Microchip Technology |
512K 3.4MHZ I2C SERIAL EEPROM |
|
|
16-3745-01Cypress Semiconductor |
IC GATE NOR |
|
|
S40135MM270B0S020Cypress Semiconductor |
IC MEMORY NOR |
|
|
MT46H128M16LFCK-5 IT:AMicron Technology |
IC DRAM 2GBIT PARALLEL 60VFBGA |
|
|
7005S55PFI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
|
IS62WV12816ALL-70BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 48MINIBGA |
|
|
MT41K256M16TW-93:PMicron Technology |
IC SDRAM DDR3 4G FBGA |
|
|
MT41J64M16JT-125E:GMicron Technology |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
|
V29F400BT-150SCCypress Semiconductor |
IC MEMORY NOR |
|
|
71421LA55JI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
