English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Discontinued at Digi-Key |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR |
| 内存大小: | 2Gb (64M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 5 ns |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 168-VFBGA |
| 供应商设备包: | 168-VFBGA (12x12) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
7143LA25J8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
|
MT29F4G16ABBEAH4-IT:E TRMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
|
MT41K256M4JP-15E:G TRMicron Technology |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
|
24AA32ASC-I/W16KRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 400KHZ DIE |
|
|
MT29F256G08AMEBBK7-12:B TRMicron Technology |
IC FLASH 256GBIT PARALLEL 83MHZ |
|
|
MT53B384M64D4NK-053 WT ES:AMicron Technology |
IC DRAM 24GBIT 1866MHZ 366WFBGA |
|
|
MT46H128M16LFB7-5 WT:B TRMicron Technology |
IC DRAM 2GBIT PARALLEL 60VFBGA |
|
|
MT48H16M16LFBF-75:HMicron Technology |
IC DRAM 256MBIT PARALLEL 54VFBGA |
|
|
MT29F512G08CUCABJ3-10RZ:A TRMicron Technology |
IC FLASH 512GBIT PAR 132LBGA |
|
|
AT49BV802A-70CI-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48CBGA |
|
|
M29W010B70N6F TRMicron Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
|
MT29F64G08AECABJ1-10Z:AMicron Technology |
IC FLASH 64GBIT PARALLEL 132VBGA |
|
|
NAND512W3A2SZA6EMicron Technology |
IC FLSH 512MBIT PARALLEL 63VFBGA |
