类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 16Kb (2K x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | Die |
供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S99JL064J60TFI000Cypress Semiconductor |
IC FLASH MEMORY NOR |
|
MT46V64M8BN-6 IT:FMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
MT29F1T08CUCABH8-6:A TRMicron Technology |
IC FLASH 1TB PARALLEL 152LBGA |
|
MT35XL02GCBA1G12-0SIT TRMicron Technology |
IC FLSH 2GBIT XCCELA BUS 24TPBGA |
|
DS28E01P-BOS+Maxim Integrated |
IC EEPROM MEMORY 1KB SMD TOSC |
|
M50FLW040BN5GMicron Technology |
IC FLASH 4MBIT PARALLEL 40TSOP |
|
S99ML02G10043SkyHigh Memory Limited |
IC GATE NAND |
|
QMP29GL064A90TFIR20Cypress Semiconductor |
IC MEMORY NOR |
|
MT47H64M16NF-25E AUT:MMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
MT53D512M32D2NP-046 AUT:D TRMicron Technology |
IC DRAM 16GBIT 2133MHZ 200WFBGA |
|
CG8405AATCypress Semiconductor |
IC SRAM ASYNC 85SOJ |
|
AT49BV322D-70CU-TRoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48CBGA |
|
MT29C4G48MAZAPAKD-5 IT TRMicron Technology |
IC FLASH RAM 4GBIT PAR 137TFBGA |