类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 68-LCC (J-Lead) |
供应商设备包: | 68-PLCC (24.21x24.21) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S99GL032N0110Cypress Semiconductor |
IC FLASH |
|
MT49H8M36BM-TI:BMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
|
MT53D384M64D4FL-046 XT:EMicron Technology |
LPDDR4 24G 384MX64 FBGA XT QDP |
|
7050L25GRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 108PGA |
|
MTFC64GJVDN-WTMicron Technology |
IC FLASH 512GBIT MMC 169LFBGA |
|
MT53B512M64D4NW-062 WT:C TRMicron Technology |
IC DRAM 32GBIT 1600MHZ FBGA |
|
EDW2032BBBG-60-F-DMicron Technology |
IC RAM 2GBIT PARALLEL 170FBGA |
|
MB85RE4M2TFN-G-ASE1Fujitsu Electronics America, Inc. |
IC FRAM 4MBIT 44TSOP |
|
M29W160ET7AN6EMicron Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
MT40A512M8RH-083E AUT:BMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
70914S20PFIRenesas Electronics America |
IC SRAM 36KBIT PARALLEL 80TQFP |
|
MT49H16M36FM-18:BMicron Technology |
IC DRAM 576MBIT PARALLEL 144UBGA |
|
MT29C3DBAN-DC TRMicron Technology |
MASSFLASH/LPDDR2 12G |