类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR4 |
内存大小: | 24Gb (384M x 64) |
内存接口: | - |
时钟频率: | 1.6 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.1V |
工作温度: | -30°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 272-WFBGA |
供应商设备包: | 272-WFBGA (15x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT40A512M8RH-083E AIT:B TRMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
70P249L90BYGIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 100CABGA |
|
IS42S32400F-7B-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
EDFA364A3MA-GD-F-R TRMicron Technology |
IC DRAM 16GBIT PARALLEL 800MHZ |
|
CG8262AACypress Semiconductor |
IC SRAM SYNC 100TQFP |
|
MT47H512M4THN-3:HMicron Technology |
IC DRAM 2GBIT PARALLEL 63FBGA |
|
709279L15PFIRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
MT53D512M32D2NP-046 AIT ES:D TRMicron Technology |
IC DRAM 16GBIT 2133MHZ 200WFBGA |
|
MT29F128G08AKAAAC5-ITZ:AMicron Technology |
IC FLASH 128GBIT PARALLEL 52VLGA |
|
11AA020T-I/CS16KRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SINGLE WIRE 4CSP |
|
MT53B256M32D1NP-062 WT ES:CMicron Technology |
IC DRAM 8GBIT 1600MHZ 200WFBGA |
|
MT41K1G4THD-187E:DMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
MT29C1G12MAACAFAML-6 ITMicron Technology |
IC FLASH RAM 1GBIT PAR 153VFBGA |