类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 64Kb (4K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 81-TFBGA |
供应商设备包: | 81-CABGA (5x5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F1T08CUCCBH8-6R:CMicron Technology |
IC FLASH 1TB PARALLEL 152LBGA |
|
W972GG8JB-18 TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 60WBGA |
|
MT53D1024M32D4NQ-053 WT ES:DMicron Technology |
IC DRAM 32GBIT 1866MHZ 200VFBGA |
|
MT29TZZZ7D7DKLAH-107 W.9B7Micron Technology |
ALL IN ONE MCP 280G |
|
MT53E384M64D4NK-053 WT:E TRMicron Technology |
LPDDR4 24G 384MX64 FBGA QDP |
|
EDF620AAABH-GD-F-DMicron Technology |
LPDDR3 6G 192MX32 FBGA |
|
MT53D256M64D4NY-046 XT ES:B TRMicron Technology |
IC DRAM 16GBIT 2133MHZ FBGA |
|
7143LA20JRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
MT53D8DBWF-DCMicron Technology |
IC DRAM 376WFBGA |
|
MT29F128G08AMCABK3-10Z:AMicron Technology |
IC FLASH 128GBIT PARALLEL 100MHZ |
|
V25FL128P0XNFI001Cypress Semiconductor |
IC GATE NOR |
|
S99-50286Cypress Semiconductor |
IC GATE NOR |
|
7016L20JRenesas Electronics America |
IC SRAM 144K PARALLEL 68PLCC |