English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 144Kb (16K x 9) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 12ns |
| 访问时间: | 12 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 68-LCC (J-Lead) |
| 供应商设备包: | 68-PLCC (24.21x24.21) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT29VZZZ7C8DQFSL-046 W.9J8 TRMicron Technology |
536G |
|
|
IS62WV5128EALL-55BIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 36TFBGA |
|
|
AT49BV161T-90CIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48CBGA |
|
|
MT53D1024M32D4BD-053 WT ES:D TRMicron Technology |
IC DRAM 32GBIT 1866MHZ FBGA |
|
|
CG8207AATCypress Semiconductor |
IC SRAM MICROPOWER |
|
|
NP8P128AE3TSM60EMicron Technology |
IC PCM 128MBIT PARALLEL 56TSOP |
|
|
550115-001-00Cypress Semiconductor |
IC FLASH NOR 128MB 8SOIC |
|
|
ECF440AACCN-P4-Y3Micron Technology |
LPDDR3 4G DIE 128MX32 |
|
|
MT47H256M8EB-25E XIT:C TRMicron Technology |
IC DRAM 2GBIT PARALLEL 60FBGA |
|
|
M58LT128KSB8ZA6EMicron Technology |
IC FLASH 128MBIT PARALLEL 64TBGA |
|
|
MT40A2G8FSE-083E:AMicron Technology |
IC DRAM 16GBIT PARALLEL 78FBGA |
|
|
5962F1120202QXACypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165CCGA |
|
|
7007L25JIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PLCC |
