类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 2Tb (256G x 8) |
内存接口: | Parallel |
时钟频率: | 167 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 272-LFBGA |
供应商设备包: | 272-LFBGA (14x18) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CP9024BTCypress Semiconductor |
IC BLUETOOTH MODULE SMD |
|
CG7850AACypress Semiconductor |
IC USB PERIPHERAL CTLR 48QFN |
|
IS65WV25616EBLL-55CTLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM |
|
MT29F256G08CMCDBJ5-6R:DMicron Technology |
IC FLASH 256GBIT PAR 132TBGA |
|
M58LR256KT70ZC5F TRMicron Technology |
IC FLASH 256MBIT PAR 79VFBGA |
|
AS4C32M16MS-7BCNTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 54BGA |
|
S71VS256RD0AHK400Cypress Semiconductor |
IC FLASH NOR SMD |
|
MT29F2G01ABBGDSF-IT:G TRMicron Technology |
IC FLASH 2GBIT SPI 16SO |
|
25AA640/WRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 1MHZ DIE |
|
DS28E01G-100+UMaxim Integrated |
INTEGRATED CIRCUIT |
|
MT53D512M32D2NP-046 AIT:DMicron Technology |
IC DRAM 16GBIT 2133MHZ 200WFBGA |
|
PC28F256G18AF TRMicron Technology |
IC FLASH 256MBIT PAR 64EASYBGA |
|
IS43R16320E-5BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |