类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR4 |
内存大小: | 48Gb (768M x 64) |
内存接口: | - |
时钟频率: | 1.6 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.1V |
工作温度: | -30°C ~ 85°C (TC) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S99FL064PM001Cypress Semiconductor |
IC FLASH NOR |
|
MT42L128M32D1LH-25 WT:AMicron Technology |
IC DRAM 4GBIT PARALLEL 216FBGA |
|
3015357Cypress Semiconductor |
IC FLASH NOR |
|
MT49H32M9BM-25:BMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
|
VPM9U1272S6B3PJ1MAViking Technology |
IC DRAM 4GBIT PARALLEL 1.2GHZ |
|
M87C257-90C1TRSTMicroelectronics |
IC EPROM 256KBIT PARALLEL 32PLCC |
|
8 925 904 553 XFCypress Semiconductor |
IC FLASH NOR |
|
AT25256B-CUL-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 8DBGA |
|
MTFC128GAOANEA-WT TRMicron Technology |
IC FLASH 1TB MMC |
|
EDFA364A3PD-JDTJ-F-RMicron Technology |
IC DRAM 16GBIT PARALLEL 933MHZ |
|
MT40A512M8RH-075E AUT:BMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
EDB4064B3PP-1D-F-DMicron Technology |
IC DRAM 4GBIT PARALLEL 240FBGA |
|
AT25320B-CUL-TRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 20MHZ 8DBGA |