类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT49BV1604A-90CIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 45CBGA |
|
MT29TZZZ7D7JKKBT-107 W.97V TRMicron Technology |
MLC EMMC/LPDDR3 280G |
|
M36W0R6050B4ZAQEMicron Technology |
IC FLASH PSRAM 96M |
|
24AA512/S16KRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 400KHZ DIE |
|
MT29F512G08EKCBBJ5-6:BMicron Technology |
NAND FLASH |
|
NAND512W3A2SN6F TRMicron Technology |
IC FLASH 512MBIT PARALLEL 48TSOP |
|
P770024CFYC000Cypress Semiconductor |
IC MPD NOR 80PQFP |
|
S99-50256Cypress Semiconductor |
IC FLASH |
|
N25Q00AA13G1241EMicron Technology |
IC FLSH 1GBIT SPI 108MHZ 24LPBGA |
|
SM662GXC-BDSilicon Motion |
FERRI-EMMC BGA 100-B EMMC 3D TLC |
|
MT53E512M64D4NW-046 WT:E TRMicron Technology |
LPDDR4 32G 512MX64 FBGA WT QDP |
|
MT29F4G08ABAEAM70M3WC1Micron Technology |
SLC 4G DIE 512MX8 |
|
7132SA55JI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |