类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 4Gb (4G x 1) |
内存接口: | SPI |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-TBGA |
供应商设备包: | 24-TBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT46H128M16LFB7-5 IT:B TRMicron Technology |
IC DRAM 2GBIT PARALLEL 60VFBGA |
|
CG8264AATCypress Semiconductor |
IC SRAM |
|
IS43R86400D-5BISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
M50FLW080AN5GMicron Technology |
IC FLASH 8MBIT PARALLEL 40TSOP |
|
IDT70825L35GRenesas Electronics America |
IC RAM 128KBIT PARALLEL 84PGA |
|
24AA64/S15KRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 400KHZ DIE |
|
MT41K512M8RH-107:E TRMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
S29WS256P0PBAW000Cypress Semiconductor |
IC MEMORY NOR SMD |
|
MT49H16M18CBM-25:BMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
|
MT51J256M32HF-70:AMicron Technology |
IC RAM 8GBIT PARALLEL 170FBGA |
|
M29W640GL70NA6F TRMicron Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
CG8632AACypress Semiconductor |
IC PSOC4 |
|
7025L15PFI8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |