English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | e•MMC™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Not For New Designs |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND |
| 内存大小: | 256Gb (32G x 8) |
| 内存接口: | MMC |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 169-TFBGA |
| 供应商设备包: | 169-TFBGA (14x18) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MTFC128GAOAMEA-WT ES TRMicron Technology |
IC FLASH 1TB MMC |
|
|
IS43TR85120AL-107MBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
|
|
MTFC128GAOANAM-WT ESMicron Technology |
MASSFLASH/CONTROLLER 1T |
|
|
S99-50055-01Cypress Semiconductor |
IC MEMORY FLASH NOR |
|
|
MT46H64M32LFCX-48 IT:BMicron Technology |
IC DRAM 2GBIT PARALLEL 90VFBGA |
|
|
CY7C197BN-15VCCypress Semiconductor |
IC SRAM 256KBIT PARALLEL 24SOJ |
|
|
MT29F8G16ABBCAH4-IT:C TRMicron Technology |
IC FLASH 8GBIT PARALLEL 63VFBGA |
|
|
MT53B1024M32D4NQ-062 WT:CMicron Technology |
IC DRAM 32GBIT 1600MHZ 200VFBGA |
|
|
7006L17J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
|
SM662GEC-BDSilicon Motion |
FERRI-EMMC BGA 100-B EMMC 3D TLC |
|
|
CG8415AATCypress Semiconductor |
ASYNC SRAMS |
|
|
S99GL032AUCypress Semiconductor |
IC MEMORY NOR |
|
|
S99GL01GP0609Cypress Semiconductor |
IC FLASH 1G PAGE SMD |
