类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR2 |
内存大小: | 4Gb (128M x 32) |
内存接口: | Parallel |
时钟频率: | 533 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.14V ~ 1.3V |
工作温度: | -30°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 168-WFBGA |
供应商设备包: | 168-FBGA (12x12) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JR28F064M29EWBAMicron Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
VS2FL008A0LMAI001Cypress Semiconductor |
IC MEMORY NOR |
|
NAND01GW3B2CZA6EMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
CY44C036PW-G-EF2E1Cypress Semiconductor |
IC MCD AUTO ANALOG 56WLCSP |
|
MT51K256M32HF-50 N:AMicron Technology |
IC RAM 8GBIT PARALLEL 1.25GHZ |
|
MT52L256M64D2PP-093 WT:B TRMicron Technology |
IC DRAM 16GBIT 1067MHZ 253VFBGA |
|
MT49H32M9FM-33:B TRMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
|
S99MS02G20029SkyHigh Memory Limited |
IC GATE NAND |
|
93LC66C-I/W15KRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ DIE |
|
MT29E1T08CUCBBH8-6:B TRMicron Technology |
IC FLASH 1TB PARALLEL 152LBGA |
|
MT53D4DAHR-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
7133LA25JI8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
S30ML02GP50TFI010Cypress Semiconductor |
IC FLASH MEMORY 48TSOP |