类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (128 x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | SOT-23-5 Thin, TSOT-23-5 |
供应商设备包: | TSOT-23-5 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CG8209AACypress Semiconductor |
IC SRAM MICROPOWER |
|
MT53B4DAPV-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
PN28F256M29EWHAMicron Technology |
IC FLASH 256MBIT PARALLEL VFBGA |
|
MT46H64M32LFT89MWC2-N1004Micron Technology |
MOBILE DDR 2G DIE 64MX32 |
|
MT53B1G32D4NQ-062 WT ES:D TRMicron Technology |
LPDDR4 32G 1GX32 FBGA QDP |
|
MT45W2MW16PGA-70 ITMicron Technology |
IC PSRAM 32MBIT PARALLEL 48VFBGA |
|
520966230597Cypress Semiconductor |
IC GATE NOR |
|
S99GL128P90TFIR20Cypress Semiconductor |
IC FLASH MEMORY NOR |
|
EM6HE08EW3F-10IHEtron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
S99-50304Cypress Semiconductor |
IC GATE NOR |
|
QMP29GL128P10TAI01Cypress Semiconductor |
IC MEMORY NOR |
|
MT42L256M64D4EV-18 WT:AMicron Technology |
IC DRAM 16GBIT PARALLEL 253FBGA |
|
CG8073AACypress Semiconductor |
IC SRAM SYNC |