类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR2 |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | 400 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 400 ps |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 84-TFBGA |
供应商设备包: | 84-FBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F2G01ABAGDM79A3WC1Micron Technology |
SLC 2G DIE 2GX1 |
|
70V9099L12PFI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
V29F040B-150JCCypress Semiconductor |
IC MEMORY NOR |
|
CG8188AATCypress Semiconductor |
IC SRAM ASYNC 28TSOP I |
|
25CS640T-I/SNRoving Networks / Microchip Technology |
IC MEMORY EEPROM 64MB SPI |
|
EMBA232B2PB-DV-F-DMicron Technology |
SPEC/CUSTOM IC SDRAM LPDDR2 TFBG |
|
AT24C16D-UUM0B-TRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 4WLCSP |
|
MT29F2T08CTCCBJ7-6R:C TRMicron Technology |
IC FLASH 2TB PARALLEL 152LBGA |
|
MTFC64GAJAECE-5M AITMicron Technology |
IC FLASH 512GBIT MMC 169LFBGA |
|
MT44K32M36RCT-125:A TRMicron Technology |
IC RLDRAM 1.125GBIT PAR 168BGA |
|
MTFC16GAKAECN-4M IT TRMicron Technology |
IC FLASH 128GBIT MMC 153VFBGA |
|
MT29F256G08CMCABJ2-10RZ:A TRMicron Technology |
IC FLASH 256GBIT PAR 132TBGA |
|
7007S35JRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PLCC |