English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 64Kb (8K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 68-LCC (J-Lead) |
| 供应商设备包: | 68-PLCC (24.21x24.21) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT40A2G4WE-075E:DMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
|
SST26VF064B-104I/WF70SRoving Networks / Microchip Technology |
IC FLASH 64MBIT SPI/QUAD WAFER |
|
|
25LC020A/S16KRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ DIE |
|
|
CG8701AFTCypress Semiconductor |
IC BT BLE IEEE 802.15.4 |
|
|
11AA010-I/WF16KRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SINGLE WIRE DIE |
|
|
MT41J128M16JT-107:KMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
|
MT53D768M64D8SQ-046 WT ES:E TRMicron Technology |
IC DRAM 48GBIT 2133MHZ 556VFBGA |
|
|
CG8364AMCypress Semiconductor |
IC SRAM |
|
|
MT29C4G96MAZBACJG-5 WTMicron Technology |
IC FLASH RAM 4GBIT PAR 168VFBGA |
|
|
MT53B384M32D2NP-053 WT:B TRMicron Technology |
IC DRAM 12GBIT 1866MHZ 200WFBGA |
|
|
MTFC16GLXDV-WTMicron Technology |
IC FLASH 128GBIT MMC 169VFBGA |
|
|
M50FW080K5GMicron Technology |
IC FLASH 8MBIT PARALLEL 32PLCC |
|
|
MT49H16M18FM-25 IT:BMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
