类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 1Tb (128G x 8) |
内存接口: | Parallel |
时钟频率: | 167 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 152-LBGA |
供应商设备包: | 152-LBGA (14x18) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
EDFA332A3PB-JD-F-DMicron Technology |
IC DRAM 16GBIT PARALLEL 933MHZ |
|
24CS512-I/MSRoving Networks / Microchip Technology |
512K 3.4MHZ I2C SERIAL EEPROM |
|
MT53D8D1AJS-DC TRMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
MT48LC16M16A2B4-7E:GMicron Technology |
IC DRAM 256MBIT PARALLEL 54VFBGA |
|
CH393-80022Cypress Semiconductor |
IC FLASH NOR |
|
MTFC128GAPALNA-AIT ES TRMicron Technology |
EMMC 1024G MMC5.1 J59X AT |
|
S99GL064N90TFI060Cypress Semiconductor |
IC GATE NOR |
|
MT52L256M64D2PP-093 WT:BMicron Technology |
IC DRAM 16GBIT 1067MHZ 253VFBGA |
|
11AA160-I/S16KRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SINGLE WIRE DIE |
|
MT53B768M64D8WF-062 WT:DMicron Technology |
IC DRAM 48GBIT 1600MHZ FBGA |
|
MT46H64M32LFCM-5 IT:AMicron Technology |
IC DRAM 2GBIT PARALLEL 90VFBGA |
|
CAT25M01VE-GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 1MBIT SPI 8SOIC |
|
M27C4002-12F1STMicroelectronics |
IC EPROM 4MBIT PARALLEL 40CDIP |