English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Box |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR4 |
| 内存大小: | - |
| 内存接口: | - |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
7005S35J8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
|
MT53D768M64D4SQ-053 WT:A TRMicron Technology |
LPDDR4 48G 768MX64 FBGA QDP |
|
|
MTFC32GLUDI-WTMicron Technology |
IC FLASH 256GBIT MMC 169TFBGA |
|
|
S29GL128P11WEI019Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL WAFER |
|
|
MT29F8G08ABACAWP-IT:CMicron Technology |
IC FLASH 8GBIT PARALLEL 48TSOP I |
|
|
MT49H16M36FM-25:B TRMicron Technology |
IC DRAM 576MBIT PARALLEL 144UBGA |
|
|
MT53B1536M32D8QD-053 WT:D TRMicron Technology |
IC DRAM 6GBIT 1866MHZ FBGA |
|
|
MTFC64GJVDN-4M IT TRMicron Technology |
IC FLASH 512GBIT MMC 169LFBGA |
|
|
MT29F4G16ABBFAM70A3WC1Micron Technology |
SLC 4G DIE 256MX16 |
|
|
IS43LD32320C-25BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 400MHZ |
|
|
S99AL008J0250Cypress Semiconductor |
IC FLASH |
|
|
MT29VZZZAD8HQKWL-053 W.G8CMicron Technology |
544G |
|
|
M29F400FB5AM62Micron Technology |
IC FLASH 4MBIT PARALLEL 44SO |
