类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 128Kb (16K x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | Die |
供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
M36L0R7060L3ZSEMicron Technology |
IC FLASH PSRAM 192M |
![]() |
AK6480BHAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 8KBIT SPI 1MHZ 8MSOP |
![]() |
MT48LC16M8A2BB-6A:LMicron Technology |
IC DRAM 128MBIT PARALLEL 60FBGA |
![]() |
25LC640/SRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 2MHZ DIE |
![]() |
7005S20PFI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
![]() |
70V37L15PF8/ERenesas Electronics America |
IC SRAM 576KBIT PARALLEL 100TQFP |
![]() |
IS46TR85120A-125KBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
![]() |
7005L15JRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
![]() |
MT29F64G08ABEBBH6-12:B TRMicron Technology |
IC FLASH 64GBIT PARALLEL 152VBGA |
![]() |
R1QGA4418RBG-25IYFRenesas Electronics America |
IC MEMORY DDR LBGA |
![]() |
CG8350AACypress Semiconductor |
IC SRAM |
![]() |
MT53D4DBBD-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
![]() |
MT41K512M16TNA-125 M:E TRMicron Technology |
IC DRAM 8GBIT PARALLEL 96FBGA |