类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR4 |
内存大小: | 32Gb (512M x 64) |
内存接口: | - |
时钟频率: | 2.133 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.1V |
工作温度: | -30°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 556-WFBGA |
供应商设备包: | 556-WFBGA (12.4x12.4) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M27C256B-10C6STMicroelectronics |
IC EPROM 256KBIT PARALLEL 32PLCC |
|
MTFC8GAMALNA-AAT ES TRMicron Technology |
IC FLASH 64GBIT MMC 100TBGA |
|
CG8243AACypress Semiconductor |
MICROPOWER SRAM |
|
MT53D4DABD-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
MT48LC4M32B2B5-6A IT:LMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
MT53B384M64D4EZ-062 WT ES:B TRMicron Technology |
IC DRAM 24GBIT 1600MHZ FBGA |
|
AS4C256M32MD2-18BCNAlliance Memory, Inc. |
IC DRAM 8GBIT 533MHZ 134FBGA |
|
MT29F1G08ABAEAH4-IT:E TRMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
DS1201NMaxim Integrated |
IC SRAM 1KBIT I2C 4MHZ 5SIP |
|
93C56C-I/WF15KRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ DIE |
|
MT29F512G08CKCABK7-6:AMicron Technology |
IC FLASH 512GBIT PARALLEL 166MHZ |
|
MT29F1G08ABBFAM78A3WC1Micron Technology |
IC FLASH 1GBIT PARALLEL WAFER |
|
S99PDL128GCypress Semiconductor |
IC MEMORY NOR |