English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3 |
| 内存大小: | 1Gb (256M x 4) |
| 内存接口: | Parallel |
| 时钟频率: | 667 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 13.5 ns |
| 电压 - 电源: | 1.283V ~ 1.45V |
| 工作温度: | 0°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 78-TFBGA |
| 供应商设备包: | 78-FBGA (8x11.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S29GL512N10FAI010Flip Electronics |
FLASH, 32MX16, 100NS, PBGA64 |
|
|
S99GL032N90BFI040Cypress Semiconductor |
IC FLASH MEMORY NOR |
|
|
EMB4432BBBBJ-DV-F-DMicron Technology |
SPEC/CUSTOM IC SDRAM LPDDR2 WFBG |
|
|
MT53D256M16D1NY-046 XT ES:B TRMicron Technology |
IC DRAM 16GBIT 2133MHZ FBGA |
|
|
A2C01507400 ACypress Semiconductor |
IC MEMORY NOR 16SOIC |
|
|
MT42L128M64D2LN-18 WT:AMicron Technology |
IC DRAM 8GBIT PARALLEL 533MHZ |
|
|
MT29F64G08AKCBBH2-12:B TRMicron Technology |
IC FLASH 64GBIT PARALLEL 100TBGA |
|
|
MT29F4G16ABAEAWP-IT:E TRMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP |
|
|
NAND16GW3B6DPA6EMicron Technology |
IC FLSH 16GBIT PARALLEL 114LFBGA |
|
|
S29AL016J55GTIR27GCypress Semiconductor |
IC FLASH 16MBIT PARALLEL |
|
|
TC58CYG0S3HRAIJToshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 1GBIT SPI 133MHZ 8WSON |
|
|
S99GL032N0090Cypress Semiconductor |
IC FLASH |
|
|
MT29C4G96MAAHBACKD-5 WT TRMicron Technology |
IC FLASH RAM 4GBIT PAR 137VFBGA |
