English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 900 ns |
| 电压 - 电源: | 1.7V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | Die |
| 供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT52L4DAPQ-DCMicron Technology |
SPECIAL/CUSTOM LPDDR3 |
|
|
MTFC8GACAANA-4M IT TRMicron Technology |
IC FLASH 64GBIT MMC 100TBGA |
|
|
MT49H64M9FM-25:B TRMicron Technology |
IC DRAM 576MBIT PARALLEL 144UBGA |
|
|
M27C256B-90C1STMicroelectronics |
IC EPROM 256KBIT PARALLEL 32PLCC |
|
|
MT47H128M4SH-25E:H TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
|
MTFC16GAKAECN-AITMicron Technology |
IC FLASH 128GBIT MMC 153VFBGA |
|
|
70V28L15PFI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
|
M29DW323DB5AN6F TRMicron Technology |
IC FLASH 256MBIT PARALLEL 48TSOP |
|
|
70V07S35JRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PLCC |
|
|
CG7925AMCypress Semiconductor |
IC SRAM MICROPOWER |
|
|
24AA64-I/W16KRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 400KHZ DIE |
|
|
MT53D768M64D8WF-053 WT ES:DMicron Technology |
IC DRAM 48GBIT 1866MHZ 376WFBGA |
|
|
M29F010B70K6EMicron Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
