English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR4 |
| 内存大小: | 8Gb (1G x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 1.2 GHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.14V ~ 1.26V |
| 工作温度: | -40°C ~ 105°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 78-TFBGA |
| 供应商设备包: | 78-FBGA (8x12) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
7130LA55TFIRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
|
MT47H256M8THN-3:H TRMicron Technology |
IC DRAM 2GBIT PARALLEL 63FBGA |
|
|
MT53E1G64D8NW-053 WT:EMicron Technology |
LPDDR4 64G 1GX64 FBGA WT 8DP |
|
|
70261S35PFI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
|
PC28F512P30BFB TRMicron Technology |
IC FLASH 512MBIT PAR 64EASYBGA |
|
|
M50FW040N5TG TRMicron Technology |
IC FLASH 4MBIT PARALLEL 40TSOP |
|
|
MT53D384M64D4NY-046 XT:DMicron Technology |
IC DRAM 24GBIT 2133MHZ FBGA |
|
|
MTFC32GAKAEJP-4M IT TRMicron Technology |
IC FLASH 256GBIT MMC 153VFBGA |
|
|
CG8223AACypress Semiconductor |
IC SRAM 4MB FAST |
|
|
DS2502-UNW-1155+Maxim Integrated |
IC INTEGRATED CIRCUIT |
|
|
MT53E512M32D2NP-046Micron Technology |
LPDDR4 16G 512MX32 FBGA WT DDP |
|
|
W25Q128JVTIQ TRWinbond Electronics Corporation |
IC FLASH 128MBIT SPI 133MHZ |
|
|
M29F400FB5AM6F2 TRMicron Technology |
IC FLASH 4MBIT PARALLEL 44SO |
