类型 | 描述 |
---|---|
系列: | * |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7016S25JRenesas Electronics America |
IC SRAM 144K PARALLEL 68PLCC |
|
MT35XL02GCBA2G12-0SIT TRMicron Technology |
IC FLSH 2GBIT XCCELA BUS 24TPBGA |
|
IS42S32800G-7BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
S99AL016J0017Cypress Semiconductor |
IC FLASH |
|
93C76C/W15KRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ DIE |
|
MT29F512G08AUEBBH8-12:BMicron Technology |
IC FLASH 512GBIT PAR 152LBGA |
|
CG8555AATCypress Semiconductor |
MICROPOWER SRAMS |
|
MT48H16M32LFCM-6 IT:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
CG7926ATCypress Semiconductor |
IC SRAM MICROPOWER |
|
M29W128GL70ZA6DEMicron Technology |
IC FLASH 128MBIT PARALLEL 64TBGA |
|
MT53B192M32D1SG-062 WT ES:AMicron Technology |
IC DRAM 6GBIT 1600MHZ |
|
MT29TZZZ7D7DKLAH-107 W ES.9B7 TRMicron Technology |
ALL IN ONE MCP 280G |
|
MT41J512M4HX-15E:DMicron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |