类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
625432-0030 03Cypress Semiconductor |
IC FLASH NOR |
|
MT40A2G8FSE-083E:A TRMicron Technology |
IC DRAM 16GBIT PARALLEL 78FBGA |
|
EN-20 16GB I-GRADESwissbit |
IND BGA PCIE SSD EN-20 (1620) 16 |
|
MT42L256M64D4LD-18 WT:AMicron Technology |
IC DRAM 16GBIT PARALLEL 220FBGA |
|
MT29F64G08EBAAAB74A3WC1P TRMicron Technology |
IC FLASH 64GBIT PARALLEL WAFER |
|
7133SA55JRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
SM662PED-BDSilicon Motion |
FERRI-EMMC BGA 153-B EMMC 3D TLC |
|
MT29F4G08ABBEAH4:EMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
24AA08-I/W16KRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ DIE |
|
MT29F2G08ABAFAH4-S:F TRMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
71V416L10YGIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
S99-50043-02Cypress Semiconductor |
IC MEMORY FLASH NOR |
|
709089S15PFIRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |