English
简体中文
MEMS OSC XO 77.7600MHZ LVCMOS LV
MOSFET N-CH 600V 6.8A TO252-3
DIDDYBORG V2 TOUCH SCREEN KIT
IC DRAM 576MBIT PARALLEL 144UBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | DRAM |
| 内存大小: | 576Mb (16M x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 533 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 15 ns |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 144-TFBGA |
| 供应商设备包: | 144-µBGA (18.5x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
MT53D4DBNW-DCMicron Technology |
LPDDR4 8G QDP |
|
|
MT40A1G4RH-083E:B TRMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
|
EDBA164B2PF-1D-F-R TRMicron Technology |
IC DRAM 16GBIT PARALLEL 533MHZ |
|
|
EDFA164A2PK-GD-F-DMicron Technology |
IC DRAM 16GBIT PARALLEL 216FBGA |
|
|
NAND256R3A2BZA6EMicron Technology |
IC FLSH 256MBIT PARALLEL 55VFBGA |
|
|
24AA256SC-I/W16KRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 400KHZ DIE |
|
|
MT53E512M64D4NW-046 WT:EMicron Technology |
LPDDR4 32G 512MX64 FBGA WT QDP |
|
|
N28H00EB03EDK34EMicron Technology |
NOR FLASH 512MX32 PLASTIC PBF TF |
|
|
7024S35JIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
|
S99-50249 PCypress Semiconductor |
IC MEM 1GB FLASH 56TSOP |
|
|
MT29F1G08ABADAH4-ITE:DMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
|
ECF440AACCN-Y3Micron Technology |
LPDDR3 4G DIE 128MX32 |
|
|
93C46A/W15KRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ DIE |