类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR4 |
内存大小: | 16Gb (512M x 32) |
内存接口: | - |
时钟频率: | 2.133 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.1V |
工作温度: | -30°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 200-WFBGA |
供应商设备包: | 200-WFBGA (10x14.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7005L35JRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
71V321LA45PFRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
S29GL064S90BHA040Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48FBGA |
|
NAND08GAH0JZC5EMicron Technology |
IC FLSH 8GBIT MMC 52MHZ 153LFBGA |
|
93C46B/W15KRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ DIE |
|
S99410081Cypress Semiconductor |
IC FLASH NAND 775PIN |
|
CATH-4878204Cypress Semiconductor |
IC FLASH NOR |
|
MT29E6T08ETHBBM5-3ES:B TRMicron Technology |
IC FLASH 6TB PARALLEL 333MHZ |
|
MT41K64M16TW-125:JMicron Technology |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
MT29E512G08CMCCBH7-6:CMicron Technology |
IC FLASH 512GBIT PAR 152TBGA |
|
7006S20JRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
S99JL032J70TFI310Cypress Semiconductor |
IC FLASH MEMORY NOR |
|
70V9159L9PFIRenesas Electronics America |
IC SRAM 72KBIT PARALLEL 100TQFP |