类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH, RAM |
技术: | FLASH - NAND, Mobile LPDRAM |
内存大小: | 1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 137-TFBGA |
供应商设备包: | 137-TFBGA (10.5x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT40A4G4NEA-062E:JMicron Technology |
SDRAM DDR4 16G 4GX4 BGA |
|
MT53E128M16D1DS-046 AIT:AMicron Technology |
IC DRAM LPDDR4 WFBGA |
|
MT29F128G08AMAAAC5-ITZ:AMicron Technology |
IC FLASH 128GBIT PARALLEL 52VLGA |
|
MT29VZZZAC8FQKSL-053 W ES.G8FMicron Technology |
ALL IN ONE MCP 3264G |
|
AK6508DUAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 16KBIT SPI 10MHZ 8USON |
|
MTFC64GAQAMEA-WTMicron Technology |
IC FLASH 512GBIT MMC 153WFBGA |
|
M27C512-90C1TRSTMicroelectronics |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
EDFA232A2MA-JD-F-DMicron Technology |
IC DRAM 16GBIT PARALLEL 933MHZ |
|
70V9099L7PFIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
MT29TZZZAD8DKKBT-107 W ES.9F8 TRMicron Technology |
MLC EMMC/LPDDR3 544G |
|
M58LR128KB85ZB5F TRMicron Technology |
IC FLASH 128MBIT PAR 56VFBGA |
|
93C56C-I/S15KRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ DIE |
|
70P254L40BYGI8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 81CABGA |