类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 128Kb (8K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 84-LCC (J-Lead) |
供应商设备包: | 84-PLCC (29.21x29.21) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S99JL032J70TFI010Cypress Semiconductor |
IC FLASH MEMORY NOR |
|
MTFC64GAQAMEA-WT TRMicron Technology |
IC FLASH 512GBIT MMC 153WFBGA |
|
IDT70824S20GRenesas Electronics America |
IC RAM 64KBIT PARALLEL 84PGA |
|
7008L25PFIRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
CG8704AFCypress Semiconductor |
IC SOC WI-FI WICED |
|
CG8552AACypress Semiconductor |
MICROPOWER SRAMS |
|
EDFP112A3PF-GDTJ-F-R TRMicron Technology |
IC DRAM 24GBIT PARALLEL 800MHZ |
|
70V06S45PF8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
7008L55PFIRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
24AA128SC-I/W16KRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 400KHZ DIE |
|
8 611 200 709Cypress Semiconductor |
IC FLASH NOR |
|
MT53B256M64D2NW-062 WT ES:CMicron Technology |
IC DRAM 16GBIT 1600MHZ FBGA |
|
MT29E6T08ETHBBM5-3:B TRMicron Technology |
IC FLASH 6TB PARALLEL 333MHZ |