类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 2Mb (256K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-LCC (J-Lead) |
供应商设备包: | 32-PLCC (11.35x13.89) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7143LA35JRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
MT29F16G08ABACAWP-Z:C TRMicron Technology |
IC FLASH 16GBIT PARALLEL 48TSOP |
|
MT49H16M36FM-25:BMicron Technology |
IC DRAM 576MBIT PARALLEL 144UBGA |
|
8 611 200 762Cypress Semiconductor |
IC FLASH NOR |
|
16-3791-01Cypress Semiconductor |
IC GATE NOR |
|
MT35XL02GCBA3G12-0SIT TRMicron Technology |
IC FLSH 2GBIT XCCELA BUS 24TPBGA |
|
70P259L65BYGI8Renesas Electronics America |
IC SRAM 128KBIT PAR 100CABGA |
|
V29F010B-120PCCypress Semiconductor |
IC MEMORY NOR |
|
CG8553AATCypress Semiconductor |
MICROPOWER SRAMS |
|
70T3589S133DR8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 208PQFP |
|
MT47H64M16HR-25E L:H TRMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
MT53D4D1ARQ-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
MT29F4G08ABAFAM70A3WC1Micron Technology |
SLC 4G DIE 512MX8 |