类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR4 |
内存大小: | 4Gb (256M x 16) |
内存接口: | - |
时钟频率: | 2.133 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.1V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53D4DASB-DC TRMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
S99-50278Cypress Semiconductor |
IC GATE NOR |
|
MTFC8GAMALNA-AIT TRMicron Technology |
IC FLASH 64GBIT MMC 100TBGA |
|
MT53B512M16D1Z11MWC2 MSMicron Technology |
LPDDR4 8G DIE 512MX16 |
|
MT46H64M32L2JG-6:A TRMicron Technology |
IC DRAM 2GBIT PARALLEL 168VFBGA |
|
MT49H32M18BM-33:B TRMicron Technology |
IC DRAM 576MBIT PARALLEL 144UBGA |
|
S29PL127J70BAW023Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
MT53D2DADS-DC TRMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
S99GL256P11FFI020Cypress Semiconductor |
IC FLASH MEMORY NOR |
|
UPD48576236F1-E24-DW1-ARenesas Electronics America |
IC DRAM 576MBIT HSTL 144TFBGA |
|
CG8706AFTCypress Semiconductor |
IC WI-FI/BLUETOOTH WICED |
|
M29F040B70N1T TRMicron Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
MTFC32GAMALAM-WT TRMicron Technology |
IC FLASH 256GBIT MMC 153VFBGA |