类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 16Kb (2K x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-WFBGA, WLCSP |
供应商设备包: | 8-WLCSP (1.35x1.37) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71321LA35PFI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
MT29F512G08AUEBBK8-12:B TRMicron Technology |
IC FLASH 512GBIT PAR 152TLGA |
|
MTFC16GJVEC-WT TRMicron Technology |
IC FLASH 128GBIT MMC 169WFBGA |
|
7133LA55JRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
M29W640GH70NB6F TRMicron Technology |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
24AA512-I/S17KRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 400KHZ DIE |
|
CAT25128YI-GT3DSanyo Semiconductor/ON Semiconductor |
IC EEPROM 128KB SERIAL SPI 8TSSO |
|
7006S55JI8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
M27C256B-12C6STMicroelectronics |
IC EPROM 256KBIT PARALLEL 32PLCC |
|
M58WR032KB7AZB6F TRMicron Technology |
IC FLASH 32MBIT PARALLEL 56VFBGA |
|
MT29F8G16ABBCAH4-IT:CMicron Technology |
IC FLASH 8GBIT PARALLEL 63VFBGA |
|
M29F800DB70M6Micron Technology |
IC FLASH 8MBIT PARALLEL 44SO |
|
IS43TR16512AL-107MBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 8GBIT PARALLEL 96LFBGA |