类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 72Kb (8K x 9) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 68-LCC (J-Lead) |
供应商设备包: | 68-PLCC (24.21x24.21) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
EDFB232A1MA-JD-F-R TRMicron Technology |
IC DRAM 32GBIT PARALLEL 933MHZ |
|
MT42L256M64D4EV-25 WT:A TRMicron Technology |
IC DRAM 16GBIT PARALLEL 253FBGA |
|
CG8193AACypress Semiconductor |
MICROPOWER SRAM |
|
P770015CF8C005Cypress Semiconductor |
IC GATE NOR |
|
70V25S45J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
7130SA55J8/2594Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
SST39VF800A-70-4I-V-CZ132Roving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL |
|
MT46H16M32LFCG-6 IT:B TRMicron Technology |
IC DRAM 512MBIT PAR 152VFBGA |
|
UPD48576118F1-E24Y-DW1-ARenesas Electronics America |
IC DRAM 576MBIT HSTL 144TFBGA |
|
AT24C512C1-10CU-2.7Roving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 1MHZ 8LAP |
|
71321SA25JI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
S29PL127J65BAI000Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 80FBGA |
|
W25Q32JWZPIG TRWinbond Electronics Corporation |
IC FLASH 32MBIT 8WSON |