类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 4Gb (512M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 63-VFBGA |
供应商设备包: | 63-VFBGA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7133SA35JIRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
SM662PEC-BDSilicon Motion |
FERRI-EMMC BGA 153-B EMMC 3D TLC |
|
MT49H16M18BM-33 TRMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
|
MT53D4DBKA-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
M25PE10-VD11Micron Technology |
IC FLASH 1MBIT SPI 75MHZ DIE |
|
MT47H128M8SH-25E:MMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
MT40A512M16TB-062E IT:J TRMicron Technology |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
8 611 200 983SkyHigh Memory Limited |
IC MEMORY FLASH NAND 48-BGA |
|
A2C00063229 ACypress Semiconductor |
IC MEMORY NOR |
|
MT40A512M8RH-075E AIT:BMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
EMBA164B2PR-DV-F-DMicron Technology |
SPEC/CUSTOM IC SDRAM LPDDR2 VFBG |
|
EDB4064B4PB-1DIT-F-DMicron Technology |
IC DRAM 4GBIT PARALLEL 216WFBGA |
|
7016L15JRenesas Electronics America |
IC SRAM 144K PARALLEL 68PLCC |