类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 4Mb (512K x 8, 256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFBGA |
供应商设备包: | 48-TFBGA (6x9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
K770001CF0C000Cypress Semiconductor |
IC MPD NOR 56TSOP |
|
S71VS256RD0AHKC00Cypress Semiconductor |
IC FLASH NOR SMD |
|
MTFC128GAPALNA-AAT ESMicron Technology |
EMMC 1024G MMC5.1 J59X AAT |
|
CG7793AATCypress Semiconductor |
IC CLOCK DISTRIBUTION |
|
CG8315AACypress Semiconductor |
IC SRAM MICROPOWER 44TSOP II |
|
S99AL016J70TFI013Cypress Semiconductor |
IC FLASH MEMORY NOR |
|
S99ML04G10040SkyHigh Memory Limited |
IC GATE NAND |
|
W632GU6AB-12Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 800MHZ |
|
MT53B384M64D4NZ-053 WT ES:CMicron Technology |
IC DRAM 24GBIT 1866MHZ FBGA |
|
M29W400FB55N3EMicron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
M29F160FT55N3F2 TRMicron Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
70T3589S166DR8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 208PQFP |
|
CAT25080YI-GT3CSanyo Semiconductor/ON Semiconductor |
IC EEPROM 8KBIT SPI 8TSSOP |