English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 70ns |
| 访问时间: | 70 ns |
| 电压 - 电源: | 4.75V ~ 5.25V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 34-LPM |
| 供应商设备包: | 34-LPM |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT29GZ5A5BPGGA-53AAT.87J TRMicron Technology |
IC FLASH RAM 4G PAR 149WFBGA |
|
|
28032116Micron Technology |
IC FLASH PAR NOR SLC 1MX16 TSOP |
|
|
CG7884AATCypress Semiconductor |
IC SRAM MICROPOWER |
|
|
N25Q008A11EF640EMicron Technology |
IC FLASH 8MBIT SPI 108MHZ SOIC |
|
|
IS43TR85120A-093NBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
|
|
S99-50477Cypress Semiconductor |
IC MEMORY NOR SMD |
|
|
24CS512T-I/STRoving Networks / Microchip Technology |
512K 3.4MHZ I2C SERIAL EEPROM |
|
|
MT44K64M18RCT-125E:A TRMicron Technology |
IC RLDRAM 1.125GBIT TBGA |
|
|
M36W0R6050U4ZSEMicron Technology |
IC FLASH PSRAM 96M |
|
|
7006S17JI8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
|
MT25QU256ABA8ESF-0AAT TRMicron Technology |
IC FLASH 256MBIT SPI 16SOP2 |
|
|
MT53D1G32D4NQ-062 WT:D TRMicron Technology |
LPDDR4 32G 1GX32 FBGA QDP |
|
|
S99GL256S0070Cypress Semiconductor |
IC FLASH |
