类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR4 |
内存大小: | 4Gb (512M x 8) |
内存接口: | Parallel |
时钟频率: | 1.2 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.14V ~ 1.26V |
工作温度: | -40°C ~ 125°C (TC) |
安装类型: | Surface Mount |
包/箱: | 78-TFBGA |
供应商设备包: | 78-FBGA (9x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29PL127J60BFID00ECypress Semiconductor |
IC FLASH NOR 80FBGA |
|
EDF8164A3PM-GD-F-DMicron Technology |
IC DRAM 8GBIT PARALLEL 800MHZ |
|
MT42L256M64D4LM-18 WT:A TRMicron Technology |
IC DRAM 16GBIT PARALLEL 216FBGA |
|
N25Q064A13EW9D0F TRMicron Technology |
IC FLASH 64MBIT SPI 108MHZ WPDFN |
|
M29F160FB5AN6E2Micron Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
93C46B/S15KRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ DIE |
|
MSM5118160F-60J3-7ROHM Semiconductor |
IC DRAM 16MBIT PARALLEL 26SOJ |
|
CAT25M01YE-GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 1MBIT SPI 8TSSOP |
|
M58LT128KST8ZA6EMicron Technology |
IC FLASH 128MBIT PARALLEL 64TBGA |
|
MT53B512M32D2GZ-062 AIT:B TRMicron Technology |
IC DRAM 16GBIT 1600MHZ 200WFBGA |
|
MT41J64M16LA-187E:B TRMicron Technology |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
EDFA164A2PP-GD-F-R TRMicron Technology |
IC DRAM 16GBIT PARALLEL 220FBGA |
|
M29W128GSH70ZA6F TRMicron Technology |
IC FLASH 128MBIT PARALLEL 64TBGA |