类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | RAM |
技术: | SARAM |
内存大小: | 64Kb (4K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Through Hole |
包/箱: | 84-BPGA |
供应商设备包: | 84-PGA (27.94x27.94) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F8G16ABACAH4-IT:CMicron Technology |
IC FLASH 8GBIT PARALLEL 63VFBGA |
|
MT29F4G16ABADAH4-AAT:DMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
M29W640GT90NA6EMicron Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
S99ML01G100TFI003SkyHigh Memory Limited |
IC MEMORY FLASH NAND 48-TSOP |
|
MT41J1G4THD-15E:DMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
A2C00058602 ACypress Semiconductor |
IC FLASH NOR |
|
MT46V32M16CY-5B XIT:J TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
580970-002-00Cypress Semiconductor |
IC FLASH |
|
MT53B4DANW-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
70V24S20PFI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
70V06S15JRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
S30ML512P50TFI513Cypress Semiconductor |
IC FLASH MEMORY 48TSOP |
|
RD48F2000P0ZBQ0AMicron Technology |
IC FLASH 64MBIT PARALLEL 88SCSP |