English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Box |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 128Mb (16M x 8) |
| 内存接口: | SPI |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | 8ms, 2.8ms |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 2V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-WDFN Exposed Pad |
| 供应商设备包: | 8-WPDFN (6x5)(MLP8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S29AS008J70WEI049Cypress Semiconductor |
IC FLASH 8MBIT PARALLEL WAFER |
|
|
MT53B768M32D4NQ-053 WT:B TRMicron Technology |
IC DRAM 24GBIT 1866MHZ 200VFBGA |
|
|
MT46H256M32R4JV-5 WT:BMicron Technology |
IC DRAM 8GBIT PARALLEL 168VFBGA |
|
|
0W665-006-XDWSanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KB I2C CMOS 4WLCSP |
|
|
7008S20PFIRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
|
M29W256GL7AZA6EMicron Technology |
IC FLASH 256MBIT PARALLEL 64TBGA |
|
|
MT25QL256ABA1ESF-0SIT TRMicron Technology |
IC FLASH 256MBIT SPI 16SOP2 |
|
|
MT53D384M16D1NP-046 XT ES:DMicron Technology |
LPDDR4 6G 384MX16 FBGA |
|
|
EDFP112A3PD-GD-F-R TRMicron Technology |
IC DRAM 24GBIT PARALLEL 800MHZ |
|
|
25AA080D-I/S16KRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ DIE |
|
|
MT29F256G08EBHAFB16A3WC1Micron Technology |
TLC 256G DIE 32GX8 |
|
|
7007S25GRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PGA |
|
|
70V06S35J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
