English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 16Kb (2K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 900 ns |
| 电压 - 电源: | 1.7V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | Die |
| 供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT41K512M8V00HWC1-N002Micron Technology |
IC DRAM 4GBIT PARALLEL |
|
|
M29F800FB55M3E2Micron Technology |
IC FLASH 8MBIT PARALLEL 44SO |
|
|
S99-50292-TCypress Semiconductor |
IC FLASH |
|
|
M58WR032KB70ZB6ZMicron Technology |
IC FLASH 32MBIT PARALLEL 56VFBGA |
|
|
MT53D384M64D4FL-046 XT:E TRMicron Technology |
LPDDR4 24G 384MX64 FBGA XT QDP |
|
|
IS62WV5128EALL-55BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 36TFBGA |
|
|
PC28F064M29EWLAMicron Technology |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
|
MT41K256M16HA-125 AAT:E TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
|
M58WR064KU70ZA6EMicron Technology |
IC FLASH 64MBIT PARALLEL 88VFBGA |
|
|
MT29C4G48MAYBBAMR-48 ITMicron Technology |
IC FLASH LPDRAM 6G 130VFBGA |
|
|
CAT25080VP2IGT3CSanyo Semiconductor/ON Semiconductor |
IC EEPROM 8KBIT SPI 8TDFN |
|
|
DS1245YL-100Maxim Integrated |
IC NVSRAM 1MBIT PARALLEL 34LPM |
|
|
MT35XU256ABA1G12-0AATMicron Technology |
IC FLASH 256MBIT XCCELA 24TPBGA |
