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IC GATE DRVR LOW-SIDE 8SOIC
BUFFER/INVERTER BASED MOSFET DRI
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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 驱动配置: | Low-Side |
| 渠道类型: | Independent |
| 司机人数: | 2 |
| 门型: | N-Channel, P-Channel MOSFET |
| 电压 - 电源: | 4.5V ~ 18V |
| 逻辑电压 - vil, vih: | 0.8V, 2.4V |
| 电流 - 峰值输出（源、汇）: | 1.5A, 1.5A |
| 输入类型: | Non-Inverting |
| 高压侧电压 - 最大值（自举）: | - |
| 上升/下降时间（典型值）: | 25ns, 25ns |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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