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| 类型 | 描述 |
|---|---|
| 系列: | AlphaSGT™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 11A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 13.5mOhm @ 11A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 10 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 755 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.1W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STL33N60M2STMicroelectronics |
MOSFET N-CH 600V 22A PWRFLAT HV |
|
CSD25484F4Texas Instruments |
MOSFET P-CH 20V 2.5A 3PICOSTAR |
|
TN0606N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 60V 500MA TO92-3 |
|
SQ4435EY-T1_GE3Vishay / Siliconix |
MOSFET P-CHANNEL 30V 15A 8SOIC |
|
SPB21N50C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 560V 21A TO263-3 |
|
2SJ665-DL-1EXRochester Electronics |
MOSFET P-CH 100V 27A TO263-2 |
|
DMP3035SFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 8.5A PWRDI3333-8 |
|
APT28M120LRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 29A TO264 |
|
DMG7N65SJ3Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 650V 5.5A TO251 |
|
IXTP260N055T2Wickmann / Littelfuse |
MOSFET N-CH 55V 260A TO220AB |
|
NTD30N02GRochester Electronics |
MOSFET N-CH 24V 30A DPAK |
|
AOSP66920Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 13.5A 8SOIC |
|
IPD50R950CEAUMA1IR (Infineon Technologies) |
CONSUMER |
