







MOSFET N-CH 100V 13.5A 8SOIC
CONN HEADER VERT 10POS 3.5MM
IC SRAM 1.125MBIT PAR 256CABGA
IC EEPROM 1KBIT SPI 1MHZ 8DIP
| 类型 | 描述 |
|---|---|
| 系列: | AlphaSGT™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 13.5A (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
| rds on (max) @ id, vgs: | 8.5mOhm @ 13.5A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 50 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2500 pF @ 50 V |
| 场效应管特征: | - |
| 功耗(最大值): | 3.1W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SOIC |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IPD50R950CEAUMA1IR (Infineon Technologies) |
CONSUMER |
|
|
IPP020N06NAKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 29A/120A TO220-3 |
|
|
AON6411Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 47A/85A 8DFN |
|
|
SQJA00EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 30A PPAK SO-8 |
|
|
DMN2004TK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 540MA SOT523 |
|
|
IRLR120NTRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 10A DPAK |
|
|
IPB17N25S3100ATMA1IR (Infineon Technologies) |
MOSFET N-CH 250V 17A TO263-3 |
|
|
IXTP120P065TWickmann / Littelfuse |
MOSFET P-CH 65V 120A TO220AB |
|
|
R6507ENJTLROHM Semiconductor |
MOSFET N-CH 650V 7A LPTS |
|
|
SQ2351ES-T1_GE3Vishay / Siliconix |
MOSFET P-CH 20V 3.2A SOT23-3 |
|
|
FCU7N60TURochester Electronics |
MOSFET N-CH 600V 7A IPAK |
|
|
DMTH4004SK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 100A TO252-4L |
|
|
STFI6N62K3STMicroelectronics |
MOSFET N CH 620V 5.5A I2PAKFP |