English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 18A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 110mOhm @ 9.6A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 32 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 650 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 57W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIHP14N50D-GE3Vishay / Siliconix |
MOSFET N-CH 500V 14A TO220AB |
|
FCPF380N60ERochester Electronics |
MOSFET N-CH 600V 10.2A TO220F |
|
IRFR7546PBFRochester Electronics |
MOSFET N-CH 60V 56A DPAK |
|
IPD90P03P404ATMA2IR (Infineon Technologies) |
MOSFET P-CH 30V 90A TO252-31 |
|
PMZ290UNE315Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
PMZB420UNRochester Electronics |
SMALL SIGNAL FET |
|
IPD50N04S408ATMA1Rochester Electronics |
IPD50N04 - 20V-40V N-CHANNEL AUT |
|
TK12A60W,S4VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 11.5A TO220SIS |
|
IXTT34N65X2HVWickmann / Littelfuse |
MOSFET N-CH 650V 34A TO268HV |
|
IRFB59N10DPBFRochester Electronics |
SMPS HEXFET POWER MOSFET |
|
BUK661R6-30C118Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
ATP102-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 40A ATPAK |
|
IPP90R1K2C3XKSA1Rochester Electronics |
MOSFET N-CH 900V 5.1A TO220-3 |
