类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
ATP102-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 40A ATPAK |
|
IPP90R1K2C3XKSA1Rochester Electronics |
MOSFET N-CH 900V 5.1A TO220-3 |
|
PMV30XPEARNexperia |
MOSFET P-CH 20V 4.5A TO236AB |
|
SQM40081EL_GE3Vishay / Siliconix |
MOSFET P-CH 40V 50A TO263 |
|
CSD25211W1015Texas Instruments |
MOSFET P-CH 20V 3.2A 6DSBGA |
|
FDD6690SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPW65R190E6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FCPF380N65FL1Rochester Electronics |
SF2 650V 380MOHM F TO220F |
|
RTL030P02TRROHM Semiconductor |
MOSFET P-CH 20V 3A TUMT6 |
|
NTS2101PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 8V 1.4A SC70-3 |
|
SIHFL110TR-GE3Vishay / Siliconix |
MOSFET N-CH 100V 1.5A SOT223 |
|
SFT1440-TL-ERochester Electronics |
MOSFET N-CH 600V 1.5A TP-FA |
|
HUF75307T3STRochester Electronics |
MOSFET N-CH 55V 2.6A SOT223-4 |