English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 40A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 18.5mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | 34 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1490 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 40W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | ATPAK |
| 包/箱: | ATPAK (2 leads+tab) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPP90R1K2C3XKSA1Rochester Electronics |
MOSFET N-CH 900V 5.1A TO220-3 |
|
PMV30XPEARNexperia |
MOSFET P-CH 20V 4.5A TO236AB |
|
SQM40081EL_GE3Vishay / Siliconix |
MOSFET P-CH 40V 50A TO263 |
|
CSD25211W1015Texas Instruments |
MOSFET P-CH 20V 3.2A 6DSBGA |
|
FDD6690SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPW65R190E6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FCPF380N65FL1Rochester Electronics |
SF2 650V 380MOHM F TO220F |
|
RTL030P02TRROHM Semiconductor |
MOSFET P-CH 20V 3A TUMT6 |
|
NTS2101PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 8V 1.4A SC70-3 |
|
SIHFL110TR-GE3Vishay / Siliconix |
MOSFET N-CH 100V 1.5A SOT223 |
|
SFT1440-TL-ERochester Electronics |
MOSFET N-CH 600V 1.5A TP-FA |
|
HUF75307T3STRochester Electronics |
MOSFET N-CH 55V 2.6A SOT223-4 |
|
2SK2011Rochester Electronics |
N-CHANNEL POWER MOSFET |
