English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 34A (Ta), 180A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 1.6mOhm @ 34A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 59 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 5340 pF @ 13 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.8W (Ta), 78W (Tc) |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DIRECTFET™ MX |
| 包/箱: | DirectFET™ Isometric MX |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SUA70060E-E3Vishay / Siliconix |
MOSFET N-CH 100V 56.6A TO220 |
|
SIR846DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8 |
|
IRF830BPBFVishay / Siliconix |
MOSFET N-CH 500V 5.3A TO220AB |
|
IRFZ44PBFVishay / Siliconix |
MOSFET N-CH 60V 50A TO220AB |
|
NVTFS5824NLTAGRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
FQPF13N06LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 10A TO220F |
|
FDB86363-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 110A D2PAK |
|
VN0106N3-G-P003Roving Networks / Microchip Technology |
MOSFET N-CH 60V 350MA TO92-3 |
|
RQ5A025ZPTLROHM Semiconductor |
MOSFET P-CH 12V 2.5A TSMT3 |
|
AUIRF2903ZRochester Electronics |
MOSFET N-CH 30V 160A TO220AB |
|
TK2A65D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 2A TO220SIS |
|
AOT9N70Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 9A TO220 |
|
BSZ0901NSIATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 25A/40A TSDSON |
